Quartz resonator assembling with TSV interposer using polymer sealing or metal bonding

This paper presents one wafer level packaging approach of quartz resonator based on through-silicon via (TSV) interposer with metal or polymer bonding sealing of frequency components. The proposed silicon-based package of quartz resonator adopts several three-dimensional (3D) core technologies, such as Cu TSVs, sealing bonding, and wafer thinning. It is different from conventional quartz resonator using ceramic-based package. With evaluation of mechanical structure design and package performances, this quartz resonator with advanced silicon-based package shows great manufacturability and excellent performance to replace traditional metal lid with ceramic-based interposer fabrication approach.     

A socio-technical approach to post-occupancy evaluation: interactive adaptability in domestic retrofit

Understanding the process of domestic retrofit is important for learning and innovation. This is particularly the case for low carbon retrofits such as those undertaken under the UK's Retrofit for the Future (RftF) programme, with its aim to achieve an overall 80% carbon reduction by 2050. Current post-occupancy evaluation (POE) research has both theoretical and methodological limitations with implications for technical and behavioural research in the built environment. Drawing on relevant ideas and concepts from social practice theory and science and technology studies, principally prefiguration (constraints/enablement), black-boxing, heating and cooling practices, this paper demonstrates how the relationship between buildings and people could be reconceptualized as mutually constitutive and co-evolving through a process of ‘interactive adaptation’. The concept of ‘interactive adaptation’ is explored through a novel approach to integrating physical and social data collected from a sample of dwellings selected from the RftF programme. Analysis yields insights into the influences and pathways of interactive adaptation resulting from retrofit technology and practices. The implications of these insights for policy-makers, the research community and practitioners are discussed: end-use energy demand policy needs to be informed by a socio-technical approach.     

Prediction of the thermal conductivity of polar pure liquids

Abstract

A relatively simple technique for the prediction of the thermal conductivity of polar organic fluids over the temperature range from 0° to 100°C is presented. The proposed model is basically derived via the generalized property correlation model developed by Riazi and Daubert in 1980. The method requires, as input, only normal boiling point, specific gravities and dipole moments or acentric factors for each compound of interest. Predicted thermal conductivities are compared with 93 literature data for 12 polar liquids. Average deviation between prediction and experiment is approximately within 8–12%, depending on the type of third input parameter, as opposed to 17% for the much involved method of Robins and Kingrea previously recommended.     

The coupled vibration in a rotating multi-disk rotor system

The influence on coupling vibrations among shaft-torsion and blade-bending coupling vibrations of a multi-disk rotor system was investigated analytically. The natural frequencies and the mode shapes of the system were solved for one- to three-disk cases as examples. First, numerical results showed how the natural frequencies varied with blades in a disk unit. The diagrams of the coupling mode shapes were drawn. From the results, it was found that the inter-blade (BB) modes were of repeated frequencies of (N_b-1) multiplicity for number blades. At multi-disk unit, the shaft-blade (SB) modes added to N_d modes for number disks. The BB modes were of repeated frequencies of [N_d×(N_b-1)] multiplicity for number disks. Numerical calculations also revealed that the natural frequencies were affected by disk distance. In the rotation effect, the times of instability will due to the number of disk. And, the more disk rotor causes instability earlier than the less disk case.     

Emotional costs of inaccurate self-assessments: Both self-effacement and self-enhancement can lead to dejection.

Despite the popularity of the idea in American culture that self-enhancement confers psychological benefits, the evidence for this idea is mixed. In the present research, we tested the contention that overly positive self-assessments could lead to psychological distress. In two correlational studies (Studies 1 and 2), we addressed some previous problems related to the measurement of self-enhancement. By measuring self-enhancement through the discrepancy between self-assessments of relative task performance and actual relative task performance, we found that self-enhancement, like self-effacement, was associated with greater vulnerability to depression. In two subsequent experiments (Studies 3 and 4), we found that leading low (or high) performers to perceive their performance as high (or low) through providing bogus performance feedback produced analogous effects on the magnitude of experienced dejection. (PsycINFO Database Record (c) 2011 APA, all rights reserved)     

InGaAs and Ge MOSFETs with high κ dielectrics

InGaAs and Ge MOSFETs with high κ’s are now the leading candidates for technology beyond the 15 nm node CMOS. The UHV-Al₂O₃/Ga₂O₃(Gd₂O₃) [GGO]/InGaAs has low electrical leakage current densities, C-V characteristics with low interfacial densities of states (D_it’s) and small frequency dispersion in both n- and p-MOSCAPs, thermal stability at temperatures higher than >850 °C, a CET of 2.1 nm (a CET of 0.6 nm in GGO), and a well tuning of threshold voltage V_th with metal work function. Device performances in drain currents of >1 mA/μm, transconductances of >710 μS/μm, and peak mobility of 1600 cm²/V s at 1 μm gate-length were demonstrated in the self-aligned, inversion-channel high In-content InGaAs n-MOSFETs using UHV-Al₂O₃/GGO gate dielectrics and ALD-Al₂O₃. Direct deposition of GGO on Ge without an interfacial passivation layer has given excellent electrical performances and thermodynamic stability. Self-aligned Ge p-MOSFETs have shown a high drain current of 800 μA/μm and peak transconductance of 420 μS/μm at 1 μm gate-length.